HFS13N65U
HFS13N65U
650V N-Channel
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 60.
0 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
4 ȍ7\S#9GS=10V 100% Avalanche Tested
March 2013
BVDSS = 650 V RDS(on) typ = 0.
4 ȍ ID = 14.
0 A
TO-220F
12 3
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
...