| Part Number | HFU2N60S |
| Manufacturer | SemiHow |
| Title | 600V N-Channel MOSFET |
| Description | HFD2N60S_HFU2N60S March 2014 HFD2N60S / HFU2N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.9 A FEATURES Originative New... |
| Features |
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tes... |
| File Size | 164.30KB |
| Datasheet |
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HFU2N60U : HFD2N60U_HFU2N60U HFD2N60U / HFU2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ 7S #9GS=10V 100% Avalanche Tested May 2014 BVDSS = 600 V RDS(on) typ = 4 ȍ ID = 1.8 A D-PAK I-PAK 2 1 3 HFD2N60U 1 2 3 HFU2N60U 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC .
HFU2N60 : HFD2N60_HFU2N60 July 2005 HFD2N60 / HFU2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.8 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60 1 2 3 HFU2N60 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC.