N-Channel MOSFET
HFD2N60U_HFU2N60U HFD2N60U / HFU2N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 5.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4 ȍ7\S#9GS=10V 100% Avalan...
SemiHow