HFD5N70S_HFU5N70S
Jan 2013
HFD5N70S / HFU5N70S
700V N-Channel
MOSFET
BVDSS = 700 V RDS(on) typ ȍ ID = 3.
8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD5N70S
1
2 3
HFU5N70S
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continu...