INCHANGE Semiconductor
isc N-Channel
Mosfet Transistor
·FEATURES ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 4.
5Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements
·DESCRITION ·High efficiency switch mode power supply.
Charger UPS power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source
Voltage
VGS Gate-Source
Voltage-Continuous
ID Drain Current-Continuous
IDM Drain Current-Single Plused
PD Total Dissipation @TC=25℃
Tj Max.
Operating Junction Temperature
Tstg Storage Temperature
isc Product Specification
HG2N60
VALUE 600 ±30 2 6 50 150
-55~150
UNIT V ...