HGB049N10S , HGP049N10S
P-1
Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control
TO-263
100V N-Ch Power
MOSFET
VDS RDS(on),typ TO-263 RDS(on),typ TO-220 ID (Sillicon Limited) ID (Package Limited)
100 V 3.
9 mΩ 4.
2 mΩ 152 A 120 A
TO-220
Drain Pin2 Gate Pin 1
Part Number HGB049N10S HGP049N10S
Package Marking TO263 GB049N10S TO220 GP049N10S
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Sil...