isc P-Channel
MOSFET Transistor
HLP5305
FEATURES ·Drain Current –ID= -31A@ TC=25℃ ·Drain Source
Voltage-
: VDSS= -55V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 65mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source
Voltage
-55
V
VGS
Gate-Source
Voltage-Continuous
±20
V
ID
Drain Current-Continuous
-31
A
IDM
Drain Current-Single Pluse
-62
A
PD
Total Dissipation @TC=25℃
96
W
TJ
Max.
Operating Junction Temperature
150
℃
Tst...