HM9N70
700VDS/±30VGS/9A(ID) N-Channel Enha ncement Mode
MOSFET
Features
VDSS=700V/VGSS=±30V/ID=9A RDS(ON)=5mΩ(max.
)@VGS=10V
Low Dense Cell Design Reliable and Rugged Advanced trench process technology
Applications
Synchronous Rectification Power Management in Inverter System
Switching Time Test Circuit and Waveforms
Pin Description Pin Description
G D S TO-220 G D S TO-220F
Package Marking and Ordering Information
Device Marking HM9N70
Device HM9N70
Device Package TO-220/F
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Shenzhen H&M Semiconductor Co.
Ltd http://www.
hmsemi.
com
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HM9N70
700VDS/±30VGS/9A(ID) N-Channel Enha ncement Mode
MOSFET
Key Electrical Characteristics (...