HI-SINCERITY
MICROELECTRONICS CORP.
Spec.
No.
: HE6836 Issued Date : 1994.
07.
20 Revised Date : 2004.
09.
08 Page No.
: 1/4
HMBT6517
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HMBT6517 is designed for general purpose applications requiring high breakdown
voltages.
Features
• High Collector-Emitter Breakdown
Voltage • Low Collector-Emitter Saturation
Voltage • The HMBT6517 is complementary to HMBT6520
Absolute Maximum Ratings
SOT-23
• Maximum Temperatures Storage Temperature.
.
.
-55 ~ +150 °C Junction Temperature...