HRLD150N10K_HRLU150N10K
HRLD150N10K / HRLU150N10K
100V N-Channel Trench
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 80 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 13 Pȍ (Typ.
) @VGS=10V Lower RDS(ON) : 14 Pȍ (Typ.
) @VGS=4.
5V 100% Avalanche Tested
Jan 2015
BVDSS = 100 V RDS(on) typ = 13 Pȍ
ID = 70 A
D-PAK I-PAK
2
1 1
32 3
HRLD150N10K HRLU150N10K 1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
–...