HRP55N10K
HRP55N10K
100V N-Channel Trench
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 190 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 4.
5 Pȍ (Typ.
) @VGS=10V 100% Avalanche Tested
August 2014
BVDSS = 100 V RDS(on) typ = Pȍ ID = 170 A
TO-220
1 23
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR PD TJ, TSTG TL
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source
Voltage
Single Pulsed Avalanch...