HRW82N10K_HRI82N10K
HRW82N10K / HRI82N10K
100V N-Channel Trench
MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 6.
5 Pȍ (Typ.
) @VGS=10V 100% Avalanche Tested
August 2014
BVDSS = 100 V RDS(on) typ = Pȍ ID = 100 A
D2-PAK I2-PAK
HRW82N10K HRI82N10K 1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS EAR
PD
Drain-Source
Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source ...