HS-6664RH
September 1995
Radiation Hardened 8K x 8
CMOS PROM
Pinouts
5
Features
• 1.
2 Micron Radiation Hardened Bulk
CMOS • Total Dose 3 x 10 RAD (Si) • Transient Output Upset 5 x 108 RAD (Si)/s • LET 100 MEV-cm2/mg • Fast Access Time - 35ns (Typical) • Single 5V Power Supply • Single Pulse 10V Field Programmable • Synchronous Operation • On-Chip Address Latches • Three-State Outputs • NiCr Fuses • Low Standby Current 500µA (Pre-Rad) • Low Operating Current 15mA/MHz • Military Temperature Range -55
oC
28 LEAD CERAMIC SBDIP CASE OUTLINE D28.
6 MIL-STD-1835, CDIP2-T28 TOP VIEW
NC 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 A0 10 DQ0 11 DQ1 12 DQ2 13 GND 14 28 VDD 27 P † 26 NC 25 A8 24 A9 ...