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HSB0104YP

Part Number HSB0104YP
Manufacturer Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for High Speed Switching
Published Mar 26, 2005
Detailed Description HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730(Z) Rev 0 Dec. 1998 Features • Can be used...
Datasheet HSB0104YP




Overview
HSB0104YP Silicon Schottky Barrier Diode for High Speed Switching ADE-208-730(Z) Rev 0 Dec.
1998 Features • Can be used for protection of signal-bus lines.
• The mounting efficiency has been improved by incorporating two low-loss diode element into a CMPAK-4 package.
Ordering Information Type No.
HSB0104YP Laser Mark E4 Package Code CMPAK-4 Outline 4 3 1 2 1 2 3 4 Anode Anode Cathode Cathode (Top View) HSB0104YP Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Note: Note: Symbol VRRM Io *1 Value 40 100 Unit V mA A °C °C IFSM Tj *2 3 125 -55 to +1...






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