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HSC276

Part Number HSC276
Manufacturer Hitachi Semiconductor
Description Silicon Schottky Barrier Diode for Mixer
Published Mar 26, 2005
Detailed Description HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev 1 Dec. 1998 Features • High forward current, Low ca...
Datasheet HSC276




Overview
HSC276 Silicon Schottky Barrier Diode for Mixer ADE-208-421A(Z) Rev 1 Dec.
1998 Features • High forward current, Low capacitance.
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information Type No.
HSC276 Laser Mark C2 Package Code UFP Outline Cathode mark Mark 1 C2 2 1.
Cathode 2.
Anode HSC276 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 3 30 125 -55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward current Capacitance ESD-Capability *1 Symbol VR IR IF C — Min 3 — 35 — 30 Typ — — — — —...






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