Preliminary
GaN Hybrid Power Amplifier HT1818-15M
Product Features
• E-pHEMT GaAs + GaN on SiC • 2-Stage Amplifier 50ohms Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency
Applications
• RF Sub-Systems • Base Station • Repeater • 4G/LTE system • Small cell
Package Type : NP-1EL
Description
The HT1818-15M is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 to 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown
voltage, high efficiency.
High In/Output impedance, High power density.
Electrical Specifications @ Vds1 =5V, Vds2 =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
1805
-
1880
Power...