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HVC359

Part Number HVC359
Manufacturer Hitachi Semiconductor
Description Variable Capacitance Diode for VCXO
Published Mar 26, 2005
Detailed Description HVC359 Variable Capacitance Diode for VCXO ADE-208-419A(Z) Rev 0 Dec. 1998 Features • High capacitance ratio and good C...
Datasheet HVC359




Overview
HVC359 Variable Capacitance Diode for VCXO ADE-208-419A(Z) Rev 0 Dec.
1998 Features • High capacitance ratio and good C-V linearity.
• To be usable at low voltage.
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information Type No.
HVC359 Laser Mark S Package Code UFP Outline Cathode mark Mark 1 S 2 1.
Cathode 2.
Anode HVC359 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V °C °C Electrical Characteristics (Ta = 25°C) Item Reverse current Symbol I R1 I R2 Capacitance C1 C4 Capacitance ratio Series resistance ESD-Capability *1 Min — — 24.
8 6.
0 3.
0 — 80 ...






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