Military & Space Products
128K x 8 STATIC RAM—SOI
FEATURES
RADIATION • Fabricated with RI
CMOS™ IV Silicon on Insulator (SOI) 0.
7 µm Process (Leff = 0.
55 µm) • Total Dose Hardness through 1x106 rad(SiO2)
com
HX6228
OTHER • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Typical Operating Power 25 mW/MHz • Asynchronous Operation •
CMOS or TTL Compatible I/O • Single 5 V ± 10% Power Supply • Packaging Options - 32-Lead Flat Pack (0.
820 in.
x 0.
600 in.
) - 40-Lead Flat Pack (0.
775 in.
x 0.
710 in.
)
• Neutron Hardness through 1x10 cm
14
-2
• Dynamic and Static Transient Upset Hardness through 1x1011 rad (Si)/s • Dose Rate Survivability through 1x1012 rad(S...