| Part Number | HY27UF081G2A |
| Manufacturer | Hynix Semiconductor |
| Title | 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash |
| Description | and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. R... |
| Features |
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width. - Multiplexed Address/ Data - Pinout compatibility for all densities FAST BLOCK ERASE - Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE - 1st cycl... |
| File Size | 435.25KB |
| Datasheet |
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HY27UF081G2M : ( DataSheet : www.DataSheet4U.com ) Preliminary HY27UF(08/16)1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. 0.0 1) Initial Draft. 1) Correct Fig.10 Sequential out cycle after read 2) Add the text to Fig.1, Table.1, Table.2 - text : IO15 - IO8 (x16 only) 3) Delete ‘3.2 Page program NOTE 1. - Note : if possible it is better to remove this constrain 4) Change the text ( page 10,13, 45) - 2.2 Address Input : 28 Addresses - 27 Addresses - 3.7 Reset : Fig.29 - Fig.30 - 5.1 Automatic page read after power up : Fig.30 - Fig.29 5) Add 5.3 Addressing for program operation & .