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HY29DS162/HY29DS163
16 Megabit (2M x 8/1M x 16) Super-Low
Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory
KEY FEATURES
n Single Power Supply Operation
n
n n
n n
n
n n n n n
− Read, program, and erase operations from 1.
8 to 2.
2 V (2.
0V ± 10%) − Ideal for battery-powered applications Simultaneous Read/Write Operations − Host system can program or erase in one bank while simultaneously reading from any sector in the other bank with zero latency between read and write operations High Performance − 120 and 130 ns access time versions with ± 10% power supply and 30pF load Ultra Low Power Consumption (Typical Values) − Automatic sleep mode current: 200 nA − Sta...