HY3306P/B
N-Channel Enhancement Mode
MOSFET
Features
• 60V/130A
RDS(ON) = 5.
4 mΩ (typ.
) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
• Switching application • Power Management for Inverter Systems.
D
G N-Channel
MOSFET
Ordering and Marking Information
S
PB HY3306 HY3306
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code P : TO-220FB-3L
Date Code YYXXX WW
B: TO-263-2L
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
H...