Part Number
|
HY57V561620FTP-6 |
Manufacturer
|
Hynix Semiconductor |
Description
|
256M (16M x 16bit) Hynix SDRAM Memory |
Published
|
Nov 27, 2015 |
Detailed Description
|
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
256M (16Mx16bit) Hynix SDRAM Memory
Memory Cell Array
- Organized as ...
|
Datasheet
|
HY57V561620FTP-6
|
Overview
256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O
256M (16Mx16bit) Hynix SDRAM Memory
Memory Cell Array
- Organized as 4banks of 4,194,304 x 16
This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for
use of circuits described.
No patent licenses are implied.
Rev 1.
2 / Dec.
2009
1
111
Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series
Document Title
256Mbit (16M x16) Synchronous DRAM
Revision History
Revision No.
0.
1 0.
2
0.
3
History
Initial Draft
Define : Current value (Page 11 ~ 12)
1.
Cerrect : 1-1.
4Banks x 2Mbits x32 -- 4Banks x 4Mbits x16(Ordering information; Page 06).
1-2.
VDDQ / VSSQ : Powe...
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