HY628400 Series
512Kx8bit
CMOS SRAM
DESCRIPTION
The HY628400 is a high-speed, low power and 4M bits
CMOS SRAM organized as 524,288 words by 8 bits.
The HY628400 uses Hyundai's high performance twin tub
CMOS process technology and was designed for high-speed and low power circuit technology.
It is particulary well suited for use in high-density and low power system applications.
This device has a data retention mode that guarantees data to remain valid at the minimum power supply
voltage of 2.
0V.
Product
Voltage Speed Operation
No.
(V) (ns) Current(mA)
HY628400
5.
0 55/70/85
10
Note 1.
Normal : Normal Temperature
2.
Current value are max.
FEATURES
• Fully static operation and Tri-st...