4M × 1-Bit Dynamic RAM
HYB 514100BJ-50/-60
Advanced Information • 4 194 304 words by 1-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 60 15 30 110 40 ns ns ns ns ns
tRAC RAS access time tCAC CAS access time tAA tRC tPC
Access time from address Read/Write cycle time Fast page mode cycle time
50 13 25 95 35
• Single + 5 V (± 10 %) supply with a built-in VBB generator • Low power dissipation max.
660 mW active (-50 version) max.
605 mW active (-60 version) • Standby power dissipation: 11 mW max.
standby (TTL) 5.
5 mW max.
standby (
CMOS) • Output unlatched at cycle end allows two-dimensional chip selection • Read, write, read-modify writ...