Part Number
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HYB514175BJ-60 |
Manufacturer
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Siemens |
Description
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256k x 16-Bit EDO-DRAM |
Published
|
Apr 23, 2005 |
Detailed Description
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256k × 16-Bit EDO-DRAM
HYB 514175BJ-50/-55/-60
Advanced Information • • • • 262 144 words by 16-bit organization 0 to ...
|
Datasheet
|
HYB514175BJ-60
|
Overview
256k × 16-Bit EDO-DRAM
HYB 514175BJ-50/-55/-60
Advanced Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 55 ns (-55 version) 60 ns (-60 version) CAS access time: 13 ns (-50 & -55 version) 15 ns (-60 version) Cycle time: 89 ns (-50 version) 94 ns (-55 version) 104 ns (-60 version) Hyper page mode (EDO) cycle time 20 ns (-50 & -55 version) 25 ns (-60 version) High data rate 50 MHz (-50 & -55 version) 40 MHz (-60 version) Single + 5 V (± 10 %) supply with a built-in VBB generator • Low Power dissipation max.
1100 mW active (-50 version) max.
1045 mW active (-55 version) max.
935 mW active ...
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