5N60/F5N60/I5N60/E5N60/B5N60/D5N60 5A 600V N-channel Enhancement Mode Power
MOSFET
1 Description
These N-channel Enhanced VD
MOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
Which accords with the RoHS standard.
VDSS = 600V RDS(on) (TYP)= 1.
4Ω
ID = 5A
2 Features
● Fast Switching ● Low ON Resistance(Rdson≤1.
7Ω) ● Low Gate Charge(Typical:19.
5nC) ● Low Reverse Transfer Capacitances(Typical:7.
5pF) ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of e...