Preliminary Data Sheet
ICE22N60W ICE22N60W N-Channel
Enhancement Mode
MOSFET
Features
• Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Optimized design for hard switching SMPS topologies
HALOGEN
Product Summary ID rDS(on)
FREE
TA=25oC
22A
Max Min Typ Typ
BVDSS @Tjmax ID=250uA 650V VGS=10V 0.
14Ω VDS=480V 82nC
D
Qg
G S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS FOR SUPERJUNCTION
MOSFETS.
THE MAJORITY OF THESE PATENTS HAVE 17 to 20 YEARS OF REMAINING LIFE.
THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
TO247 1:G, 2:D, 3:S, ...