IDB10S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compliant
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Product Summary V DC Qc IF 600 24 10 V nC A
D2PAK
• Qualified according to JEDEC1) for target applications
• Breakdown
voltage tested at 5mA2)
thinQ! 2G Diode designed for fast switching applications like: • CCM PFC • Motor Drives Type IDB10S60C Package D2PAK Marking D10S60C Pin 2 C Pin 3 A
Maximum ratings, at T j=25 °C, unless otherwise specified Parame...