IDDD06G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes.
The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system.
The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF .
The CoolSiC™ Schottky diode V G has been designed to complement our V and V CoolMOS™ families, meeting the most stringent application requirements in this
voltage range.
Table 1
Key performance parameters
Parameter
Value
Unit
VRRM 650 V
QC (VR = ...