Part Number
|
IDH02G65C5 |
Manufacturer
|
Infineon |
Description
|
650V SiC Schottky Diode |
Published
|
Oct 30, 2018 |
Detailed Description
|
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDH02G65C5
Final Datasheet
Rev. 2.2, 2012-12-1...
|
Datasheet
|
IDH02G65C5
|
Overview
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDH02G65C5
Final Datasheet
Rev.
2.
2, 2012-12-10
Power Management & Multimarket
5th Generation thinQ!™ SiC Schottky Diode
1 Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology.
The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been desi...
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