Diode
Silicon Carbide Schottky Diode
IDM05G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Final Datasheet
Rev.
2.
0 2015-08-28
Industrial Power Control
SiC Schottky Diode
IDM05G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Features:
Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward
voltage even at high operating temperature Tight forward
voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant
Benefit...