FEATURES:
• High-density 1024K-bit (128K x 8-bit)
CMOS static RAM modules with registered/buffered/latched addresses and I/Os
• Fast access times: 75ns max.
commercial and military
• Low-power consumption (typ.
): active 980mW; standby 150mW; full-standby 1.
6mW
• Low input capacitance (typ.
): input 20pF; output 25pF
• High output drive (min.
): IOL =32mA; IOH =-15mA
• 64-pin, 900 mil center sidebraze DIP with LCCs on both sides, achieving very high memory density
• Module select output • Separate inputs and outputs
• Clear data and clock enables on all registers • Addresses, inputs and outputs on separate clocks or latch
enables
• Registered write enable • Internal bypass
capacitors for minimi...