128K x 24 Three Megabit 3.
3V
CMOS Static RAM
IDT7MMV4101
x x
Features
High density 3 megabit 3.
3V static RAM Low profile 119 lead, 14mm x 22mm BGA (Ball Grid Array) Fast RAM access times: 10,12,15ns Single 3.
3V power supply Multiple Vcc & GND pins for maximum noise immunity Inputs/outputs directly LVTTL compatible Commercial (0O C to +70O C) Industrial (-40O C to +85O C) temperature options – Commercial: 10 / 12 / 15 ns – Industrial: 12 / 15 ns
Description
The IDT7MMV4101 is a three megabit static RAM constructed on an multilayer laminate substrate using three 3.
3V, 128K x 8 (IDT71V124) static RAMS encapsulated in a Ball Grid Array (BGA).
The IDT7MMV4101 is packaged in a plastic BGA.
The...