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Insulated Gate Bipolar Transistor
Preliminary 26.
4 4/85
IGT6D10,E10
10 AMPERES 400, 500 VOLTS EQUIV.
RDS(ON) = 0.
27 n
This IGT'II Transistor (Insulated Gate Bipolar Transistor) is a new type of MOSĀ·gate turn onloff power switching device combining the best advantages of power
MOSFETS and bipolar transistors.
The result is a device that has the high input impedance of
MOSFETS and the low on-state conduction losses similar to bipolar transistors.
The device design and gate characteristics of the IGT'II Transistor are also similar to power
MOSFETS.
An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is tu...