IMW120R140M1H
IMW120R140M1H
CoolSiC™ 1200V SiC Trench
MOSFET Silicon Carbide
MOSFET
Features
Very low switching losses
Gate
pin 1
Threshold-free on state characteristic
Wide gate-source
voltage range
Benchmark gate threshold
voltage, VGS(th) = 4.
5V
0V turn-off gate
voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Benefits
Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost
Potential applications
Energy generation o Solar string inverter and solar optimizer
Indus...