Part Number
|
IPA028N08N3G |
Manufacturer
|
Infineon Technologies |
Description
|
Power-Transistor |
Published
|
Mar 27, 2011 |
Detailed Description
|
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC...
|
Datasheet
|
IPA028N08N3G
|
Overview
OptiMOS(TM)3 Power-Transistor
Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21
Type
IPA028N08N3 G
IPA028N08N3 G
Product Summary VDS RDS(on),max ID
80 V 2.
8 mW 89 A
Package
PG-TO-220-FP
Marking
028N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain current
I D T C=25 °C2)
89
T C=100 °C
62
Pulsed dr...
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