isc N-Channel
MOSFET Transistor IPA60R125P6,IIPA60R125P6
·FEATURES ·Drain-source on-resistance:
RDS(on) ≤0.
125Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·It is intended for general purpose switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
30
IDM
Drain Current-Single Pulsed
87
PD
Total Dissipation @TC=25℃
34
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
S...