Part Number
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IPB017N06N3G |
Manufacturer
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Infineon Technologies |
Description
|
Power Transistor |
Published
|
Aug 1, 2011 |
Detailed Description
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Type
IPB017N06N3 G
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync. rec. • Optimized...
|
Datasheet
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IPB017N06N3G
|
Overview
Type
IPB017N06N3 G
OptiMOS™3 Power-Transistor
Features • Ideal for high frequency switching and sync.
rec.
• Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 Type IPB017N06N3 G
Product Summary V DS R DS(on),max ID 60 1.
7 180 V mΩ A
Package Marking
PG-TO263-7 017N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche...
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