Part Number
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IPB11N03LAG |
Manufacturer
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Infineon Technologies |
Description
|
Power-Transistor |
Published
|
Apr 9, 2008 |
Detailed Description
|
www.DataSheet4U.com
IPB11N03LA G
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qua...
|
Datasheet
|
IPB11N03LAG
|
Overview
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DataSheet4U.
com
IPB11N03LA G
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max (SMD version) ID 25 11.
2 30 V mΩ A
PG-TO263-3-2
Type IPB11N03LA G
Package PG-TO263-3-2
Marking 11N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Aval...
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