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IPB120N06N G
IPP120N06N G
OptiMOS® Power-Transistor
Features • For fast switching converters and sync.
rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID
SMDversion
60 11.
7 75
V mΩ A
Type
IPP120N06N G
IPB120N06N G
Package Marking
P-TO220-3-1 120N06N
P-TO263-3-2 120N06N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source
voltage Power dissipation Operating and storage te...