| Part Number | IPD12CN10NG |
| Manufacturer | Infineon |
| Title | Power-Transistor |
| Description | IPB12CN10N G IPD12CN10N G IPI12CN10N G IPP12CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 12.4 mW 67 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application... |
| Published | Sep 30, 2020 |
| Datasheet |
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