isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
IPD30N10S3L-34
·FEATURES ·With TO-252(DPAK) packaging ·With low gate drive requirements ·Very high commutation ruggedness ·Extremely high frequency operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications ·LCD&PDP TV ·PC silverbox ·UPS and solar
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
100
VGSS ID IDM PD
Gate-Source
Voltage Drain Current-Continuous@TC=25℃
TC=100℃ Drain Current-Single Pulsed
Total Dissipation
±20 30 20 120
57
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Tem...