Part Number
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IPD49CN10NG |
Manufacturer
|
Infineon |
Description
|
Power Transistor |
Published
|
Apr 14, 2015 |
Detailed Description
|
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very lo...
|
Datasheet
|
IPD49CN10NG
|
Overview
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
IPB50CN10N G IPD49CN10N G IPI50CN10N G IPP50CN10N G
Product Summary V DS R DS(on),max (TO252) ID
100 V 49 mΩ 20 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB50CN10N G
IPD49CN10N G
IPI50CN10N G
IPP50CN10N G
Package Marking
PG-TO263-3 50CN10N
PG-TO252-3 49CN10N
PG-TO262-3 50CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous dr...
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