Part Number
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IPD50N06S3L-06 |
Manufacturer
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Infineon |
Description
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Power Transistor |
Published
|
Apr 14, 2015 |
Detailed Description
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IPD50N06S3L-06
OptiMOS®-T Power-Transistor
Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 ...
|
Datasheet
|
IPD50N06S3L-06
|
Overview
IPD50N06S3L-06
OptiMOS®-T Power-Transistor
Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested
Product Summary V DS R DS(on),max ID
55 V 6.
0 mΩ 50 A
PG-TO252-3-11
Type IPD50N06S3L-06
Package
Marking
PG-TO252-3-11 3N06L06
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=25 A
Avalanche current, single pulse
I A...
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