isc N-Channel
MOSFET Transistor IPD60R170CFD7,IIPD60R170CFD7
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤170mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Improved
MOSFET reverse diode dv/dt and diF/dt ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
14
IDM
Drain Current-Single Pulsed
51
PD
Total Dissipation @TC=25℃
76
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
...