isc N-Channel
MOSFET Transistor IPD65R1K5CE,IIPD65R1K5CE
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤1.
5Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Fast switching ·Very high commutation ruggedness
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
650
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
5.
2
IDM
Drain Current-Single Pulsed
8.
3
PD
Total Dissipation @TC=25℃
53
Tj
Max.
Operating Junction Temperature
150
Tstg
Storage Temperature
-40~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Cha...