OptiMOS™-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested
IPD70N10S3-12
Product Summary VDS RDS(on),max ID
100 V 11.
1 mW 70 A
PG-TO252-3-11
Type
Package
Marking
IPD70N10S3-12
PG-TO252-3-11 QN1012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
ID
T C=25°C, V GS=10V
T C=100°C, V GS=10V1)
Pulsed drain current1)
I D,pulse T C=25°C
Avalanche energy, single pulse1)
E AS
I D=35A
Avalanche current, single pulse
I AS
Gate source
voltage
V GS
Power dissipation
P tot
T ...