OptiMOS®-T Power-Transistor
Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested
IPD90N04S3-H4
Product Summary V DS R DS(on),max ID
40 V 4.
3 mΩ 90 A
PG-TO252-3-11
Type IPD90N04S3-H4
Package
Marking
PG-TO252-3-11 QN04H4
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=45 A
Avalanche current, single pulse I AS -
Gate source
voltage
V GS
-
Pow...