Part Number
|
IPG20N10S4L-22 |
Manufacturer
|
Infineon Technologies |
Description
|
Power-Transistor |
Published
|
May 30, 2015 |
Detailed Description
|
OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to ...
|
Datasheet
|
IPG20N10S4L-22
|
Overview
OptiMOS™-T2 Power-Transistor
Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested
IPG20N10S4L-22
Product Summary VDS RDS(on),max4) ID
100 V 22 mΩ 20 A
PG-TDSON-8-4
Type IPG20N10S4L-22
Package
Marking
PG-TDSON-8-4 4N10L22
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current one channel active1)
I D T C=25°C, V GS=10V
T C=100°C, V GS=10V2)
Pulsed drain current2) one channel active
I D,pulse -
Avalanche energy, single pulse2, 4) Avalanche current, single pulse4) Gate source volta...
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