IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 263) ID 100 V 4.
2 mW 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G Package Marking PG-TO263-3 042N10N PG-TO262-3 045N10N PG-TO220-3 045N10N Maximum ratings, at T A=25 °C, unless otherwise specified Parameter Symbol Cond...

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